Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2011-03-08
2011-03-08
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C438S167000, C438S172000, C438S197000, C438S584000, C438S585000, C438S586000, C438S590000, C438S597000, C438S660000, C438S669000
Reexamination Certificate
active
07901994
ABSTRACT:
Methods of fabricating transistor in which a first Group III nitride layer is formed on a substrate in a reactor, and a second Group III nitride layer is formed on the first Group III nitride layer. An insulating layer such as, for example, a silicon nitride layer is formed on the second Group III nitride layer in-situ in the reactor. The substrate including the first Group III nitride layer, the second group III nitride layer and the silicon nitride layer is removed from the reactor, and the silicon nitride layer is patterned to form a first contact hole that exposes a first contact region of the second Group III nitride layer. A metal contact is formed on the first contact region of the second Group III nitride layer.
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Saxler Adam William
Sheppard Scott T.
Chang Leonard
Cree Inc.
Ghyka Alexander G
Myers Bigel Sibley & Sajoec
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