Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-08-02
2011-08-02
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S022000, C438S023000, C438S082000, C438S099000, C438S149000, C257SE21320, C257SE21372, C257SE27112, C257SE51005
Reexamination Certificate
active
07989240
ABSTRACT:
A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the first insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.
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Chang Leonard
Christie Parker & Hale LLP
Ghyka Alexander G
Samsung Mobile Display Co., Ltd.
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