Methods of manufacturing a metal-insulator-metal capacitor

Details Methods of manufacturing a metal-insulator-metal capacitor Methods of manufacturing a metal-insulator-metal capacitor

2008-01-01

2008-01-01

Prenty, Mark V. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000

Reexamination Certificate

active

11231497

ABSTRACT:
Methods of manufacturing a metal-insulator-metal capacitor are provided. An illustrated method includes: forming a lower metal electrode layer pattern in a metal-insulator-metal capacitor region and a lower metal line layer pattern in a metal line region above an insulating layer above a semiconductor substrate; forming an intermetal insulating layer covering the lower metal electrode layer pattern and the lower metal line layer pattern; forming a first trench by removing a portion of the intermetal insulating layer in the metal-insulator-metal capacitor region, a portion of the intermetal insulating layer being left on the lower metal electrode layer pattern; forming a second trench exposing a portion of the lower metal electrode layer pattern by forming an insulating spacer layer on a sidewall of the first trench and removing the remaining intermetal insulating layer under the first trench; forming a dielectric layer over the entire upper surface of the resultant structure; forming a via hole exposing a portion of the lower metal line layer pattern of the metal line region using a predetermined mask layer pattern; and forming an upper metal electrode layer on the dielectric layer within the second trench and a via contact connected to the lower metal line layer pattern within the via hole.

REFERENCES:
patent: 2006/0134880 (2006-06-01), Lee

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