Methods of manufacture of semiconductor bodies

Details Methods of manufacture of semiconductor bodies Methods of manufacture of semiconductor bodies

1975-04-21

1977-03-22

Arnold, Donald J.

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

106 44, 264 61, C04B 3556

Patent

active

040137465

ABSTRACT:
A method of manufacture of a semiconductor pellet of an electric surface-discharge igniter of a gas-turbine engine begins with a mixture of 60% by weight silicon-carbide particles of 600 British Standard Mesh size, and 40% by weight of powdered alumino-silicate or other silica glass, containing 85% silica. The mixture is heated to 1250.degree. C. to coat the silicon-carbide particles with silica, and then when cool is milled down to 150 British Standard Mesh size. After being mixed with an organic binder the mixture is dried and then sifted through a sieve of 30 British Standard mesh on to a sieve of 60 British Standard mesh. The portion of the material retained on the latter seive is compacted in a press under 50,000 pounds per square inch into the annular pellet-form and sintered to a temperature of 1500.degree. C. in a non-oxidizing atmosphere. The portion of silicon carbide in the initial mixture may in general vary between 45% and 75% by weight, with the range between 50% and 70% being particularly suitable, and between 55% and 65% especially advantageous, in the manufacture of igniter pellets. The silicate constituent which may contain between 75% and 95% silica by weight, may be provided by a metal oxide that will react with silicon carbide to produce the required non-conductive metal silicate during the heating. The initial heating before compaction may in general be carried out at between 1150.degree. C. and 1300.degree. C.

REFERENCES:
patent: 3376367 (1968-04-01), Subramanya et al.

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