Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly
Patent
1995-09-13
1997-07-15
Bradley, P. Austin
Electric lamp or space discharge component or device manufacturi
Process
With assembly or disassembly
442 50, H01J 130, H01J 902
Patent
active
056477856
ABSTRACT:
A vertical microelectronic field emitter is formed by first forming tips on the face of a substrate and then forming trenches in the substrate around the tips to form columns in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric and a conductor layer is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate with the trenches defining columns in the substrate. Then, tips are formed on top of the columns. The trenches are filled with dielectric and the conductor layer is formed on the dielectric to form the extraction electrodes.
REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3921022 (1975-11-01), Levine
patent: 3970887 (1976-07-01), Smith et al.
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4008412 (1977-02-01), Yuito et al.
patent: 4095133 (1978-06-01), Hoeberechts
patent: 4163949 (1979-08-01), Shelton
patent: 4307507 (1981-12-01), Gray et al.
patent: 4513308 (1985-04-01), Greene et al.
patent: 4578614 (1986-03-01), Gray et al.
patent: 4818914 (1989-04-01), Brodie
patent: 4964946 (1990-10-01), Gray et al.
patent: 4990766 (1991-02-01), Simms et al.
patent: 5012153 (1991-04-01), Atkinson et al.
patent: 5030895 (1991-07-01), Gray
patent: 5053673 (1991-10-01), Tomii et al.
patent: 5142184 (1992-08-01), Kane
patent: 5164632 (1992-11-01), Yoshida et al.
patent: 5211707 (1993-05-01), Ditchek et al.
patent: 5249340 (1993-10-01), Kane et al.
patent: 5320570 (1994-06-01), Kane
patent: 5371431 (1994-12-01), Jones et al.
Control of Silicon Field Emitter Shape with Isotropically Etched Oxide Masks, J.B. Warren, Inst. Phys. Conf. Ser. No. 99, Section 2; Paper Presented at 2nd Int. Conf. on Vac. Microelectron., Bath, 1989, pp. 37-40.
Jones Gary Wayne
Sune Ching-Tzong
Bradley P. Austin
Knapp Jeffrey T.
MCNC
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