Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material
Reexamination Certificate
2008-07-22
2008-07-22
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
C977S811000, C977S938000
Reexamination Certificate
active
07402506
ABSTRACT:
A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
REFERENCES:
patent: 6268014 (2001-07-01), Eberspacher et al.
patent: 6821559 (2004-11-01), Eberspacher et al.
patent: 2001/0048489 (2001-12-01), Izumi et al.
patent: 2002/0006470 (2002-01-01), Eberspacher et al.
patent: 2002/0022672 (2002-02-01), Thunhorst et al.
patent: 2004/0127038 (2004-07-01), Carcia et al.
patent: 2005/0192381 (2005-09-01), Bringley et al.
patent: 2005/0214916 (2005-09-01), Absar et al.
patent: 2005/0239939 (2005-10-01), Zheng et al.
patent: 2005/0275615 (2005-12-01), Kahen et al.
patent: 2006/0290994 (2006-12-01), Miyake
patent: 2006/0292777 (2006-12-01), Dunbar
patent: 2007/0007342 (2007-01-01), Cleeves et al.
patent: 2007/0141726 (2007-06-01), Ying et al.
patent: 1763263 (2006-04-01), None
patent: 1 324 398 (2003-07-01), None
patent: 2004349583 (2004-09-01), None
patent: 2006/002149 (2006-01-01), None
Eric A. Meulenkamp, Size Dependence of the Dissolution of ZnO Nanoparticles, J. Phys. Chem. B, 102 (40), 7764-7769, 1998.
Il-Doo Kim, YongWoo Choi, and Harry L. Tuller; Low-voltage ZnO thin-film transistors with high-K Bi1.5Zn1.0Nb1.5O7 gate insulator for transparent and flexible electronics, Appl. Phys. Lett. 87, 043509 (2005).
B J Norris, J Anderson, J F Wager1 and D A Keszler, Spin-coated zinc oxide transparent transistors, J. Phys. D: Appl. Phys. 36 No. 20 (Oct. 21, 2003).
Miguel Monge, Myrtil L. Kahn, André Maisonnat, Bruno Chaudret; Room-Temperature Organometallic Synthesis of Soluble and Crystalline ZnO Nanoparticles of Controlled Size and Shape; Angewandte Chemie International Edition vol. 42 No. 43 p. 5321-5324 Copyright © 2003 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
V. Noack and A. Eychmuller, Annealing of nanometer-sized zinc oxide particles, Chem. Mater. 14, 1411 (2002). [Inspec] [ISI].
Moonsub Shim and Philippe Guyot-Sionnest, Organic-Capped ZnO Nanocrystals: Synthesis and n-Type Character, J. Am. Chem. Soc. 2001, 123, 11651-11654.
Rataboul, F. and Casanove, Synthesis and characterization of monodisperse zinc and zinc oxide nanoparticles from the organometallic precursor [Zn(C6H11)2] M., J. Organomet. Chem., 2002, vol. 643, pp. 307-312.
A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles Volkman, S.K.; Mattis, B.A.; Molesa, S.E.; Lee, J.B.; de la Fuente Vombrock, A.; Bakhishev, T.; Subramanian, V. Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International, vol. Iss., Dec. 13-15, 2004 pp. 769-772.
Burke, S. E.; Barrett, C. J. Langmuir 2003, 19, 3297.
Steven K. volkman et al., “A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles,” 2004 IEEE International Electron Device meeting, Technical Digest, pp. 769, 2004.
M. Hilgendorff, et al., “From ZnO Colloids to Nanocrystalline Highly Conductive Films,” Journal of the Electrochemical Society, Electrochemical Society. Manchester, New Hampshire, US, vol. 145, No. 10, Oct. 1998, pp. 3632-3637, XP000914529.
R. Maity, et al., “Synthesis and characterization of ZnO nano/microfibers thin films by catalyst free solution route,” Physica E—Low-Dimensional Systems and Nanostructures, Elsevier Science BV, NL, vol. 25, No. 4, Jan. 2005, pp. 605-612, XP004667994.
Pengchao Si, et al., “Synthesis of ZnO nanowhiskers by a simple method,” Materials Letters, North Holland Publishing Company. Amsterdam, NL, vol. 57, No. 24-25, Aug. 2003, pp. 4079-4082, XP004443750.
Irving Lyn M.
Levy David H.
Scuderi Andrea C.
Eastman Kodak Company
Konkol Chris P.
Stark Jarrett J
Toledo Fernando L.
LandOfFree
Methods of making thin film transistors comprising... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of making thin film transistors comprising..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of making thin film transistors comprising... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2801011