Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2007-10-25
2009-10-13
Trinh, Minh (Department: 3729)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C438S250000, C438S253000, C361S313000
Reexamination Certificate
active
07601181
ABSTRACT:
Described herein are methods for making articles comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.
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Borland William
Burn Ian
Ihlefeld Jon Fredrick
Maria Jon Paul
Suh Seigi
E.I. du Pont de Nemours and Company
North Carolina State University
Trinh Minh
LandOfFree
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