Methods of making spintronic devices with constrained...

Details Methods of making spintronic devices with constrained... Methods of making spintronic devices with constrained...

2007-03-16

2009-12-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S048000, C438S022000, C438S052000, C257S295000

Reexamination Certificate

active

07625767

ABSTRACT:
A method is for making a spintronic device and may include forming at least one superlattice and at least one electrical contact coupled thereto, with the at least one superlattice including a plurality of groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion having a crystal lattice, at least one non-semiconductor monolayer constrained within the crystal lattice of adjacent base semiconductor portions, and a spintronic dopant. The spintronic dopant may be constrained within the crystal lattice of the base semiconductor portion by the at least one non-semiconductor monolayer. In some embodiments, the repeating structure of a superlattice may not be needed.

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Jonker et al., “Electrical Spin Injection and Transport in Semiconductor Spintronic Devices”, MRS Bulletin/Oct. 2003, pp. 740-746.

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