Methods of making shallow trench-type pixels for CMOS image...

Details Methods of making shallow trench-type pixels for CMOS image... Methods of making shallow trench-type pixels for CMOS image...

2006-01-03

2006-01-03

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S199000

Reexamination Certificate

active

06982187

ABSTRACT:
A method of making a shallow trench-type pixel for a CMOS image sensor is disclosed. The disclosed pixel-fabricating method can increase the active area of a pixel by forming a photodiode in the shape of a shallow trench. In one example, a disclosed method includes forming a CMOS image sensor on an epitaxial wafer, forming a first photoresist layer over said structure, patterning so as to form a shallow trench on a pixel area, and, then, etching, removing said first photoresist layer, forming a second photoresist layer over said structure, pattering so as to form a photodiode junction, and, then, conducting ion-implanting process; and removing said second photoresist layer and conducting a thermal treatment process.

REFERENCES:
patent: 4536946 (1985-08-01), Nishizawa et al.
patent: 6177333 (2001-01-01), Rhodes
patent: 6329233 (2001-12-01), Pan et al.
patent: 6372603 (2002-04-01), Yaung et al.
patent: 6500692 (2002-12-01), Rhodes

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