Methods of making narrow channel field effect transistors

Details Methods of making narrow channel field effect transistors Methods of making narrow channel field effect transistors

1982-09-28

1983-10-18

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148187, 148189, H01L 21223, H01L 21265

Patent

active

044097271

ABSTRACT:
A pair of narrow channel IGFET devices having separate insulated gate electrode structures formed over narrow channel regions of a substrate flanking a central enhancement region. Methods of forming the narrow channel regions using a single photolithography step and forming separate gate electrode structures overlying each using alternative processes, each generally involving two photolithography steps, are set forth.

REFERENCES:
patent: 3401349 (1968-09-01), Mitchell
patent: 4026740 (1977-05-01), Owen
patent: 4040168 (1977-08-01), Huang
patent: 4085498 (1978-04-01), Rideout
patent: 4124826 (1978-11-01), Dixon et al.
patent: 4124933 (1978-11-01), Nicholas
patent: 4145233 (1979-03-01), Setick et al.
patent: 4212683 (1980-07-01), Jones et al.

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