Methods of making integrated circuit barrier structures

Details Methods of making integrated circuit barrier structures Methods of making integrated circuit barrier structures

1992-06-15

1994-02-15

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437246, 20419217, H01L 21283

Patent

active

052866769

ABSTRACT:
A barrier metal integrated circuit structure, including relatively thin, highly nitrided layers of TiW (i.e., TiW:N) straddling a central conductor layer, and in turn each being straddled by adjacent layers of relatively thick substantially un-nitrided TiW material, and a method for its fabrication including deposition of layers of TiW and TiW:N, the latter in a N.sub.2 dominated atmosphere by backs puttering and/or under backbias conditions effective for establishing at least a saturated level of nitrogen into the TiW:N, resulting in an effective barrier to migration of conductor materials from the conductor layer.

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patent: 4927505 (1990-05-01), Sharma et al.
patent: 5164331 (1992-11-01), Lin et al.
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