Methods of making high voltage GaN-A1N based semiconductor devic

Details Methods of making high voltage GaN-A1N based semiconductor devic Methods of making high voltage GaN-A1N based semiconductor devic

1995-12-28

1999-06-22

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438604, H01L 2100

Patent

active

059151641

ABSTRACT:
The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

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