Methods of making composite conductive structures in integrated

Details Methods of making composite conductive structures in integrated Methods of making composite conductive structures in integrated

1979-06-11

1980-10-14

Kendall, Ralph S.

Metal treatment

Compositions

Heat treating

427 88, 427 91, 427 93, 357 67, 357 71, H01L 21283

Patent

active

042279445

ABSTRACT:
A method of making a composite conductive structure is described. The structure includes an insulating substrate on which is provided a conductor of a refractory metal substantially nonreactive with silicon dioxide covered by a layer of a silicide of the refractory metal and a layer of silicon dioxide. The method includes depositing a layer of polycrystalline silicon over the conductor and the insulating substrate, reacting the layer of polycrystalline silicon with the conductor to form a refractory metal silicide, removing the unreacted portion of the layer of polycrystalline silicon, and then oxidizing the exposed surface of the refractory metal silicide into a layer of silicon dioxide.

REFERENCES:
patent: 3375418 (1968-03-01), Garnache et al.
patent: 4109372 (1978-08-01), Geffken
patent: 4128670 (1978-12-01), Gaensslen

Affiliated with

Also associated with

Rating

Methods of making composite conductive structures in integrated does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of making composite conductive structures in integrated , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of making composite conductive structures in integrated will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2099505