Methods of making carbon-containing semiconducting devices...

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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C257S040000, C257SE51012, C257SE51017, C257SE51024, C257SE51028, C257SE51038, C257SE51046

Reexamination Certificate

active

08030127

ABSTRACT:
Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.

REFERENCES:
patent: 7235912 (2007-06-01), Sung
patent: 2002/0085968 (2002-07-01), Smalley et al.
patent: 2002/0121915 (2002-09-01), Montull et al.
patent: 2003/0151107 (2003-08-01), Yamada et al.
patent: 2005/0167799 (2005-08-01), Doan
patent: 2008/0277652 (2008-11-01), Michizuki et al.
patent: 03-062036 (1991-03-01), None
patent: 04-028856 (1992-01-01), None
patent: 2001-026873 (2001-01-01), None
patent: 2002-033497 (2002-01-01), None
patent: 2002-094097 (2002-03-01), None
patent: 2002094097 (2002-03-01), None
patent: 2003-209270 (2003-07-01), None
Anguita et al., “Semiconducting Hydrogenated Carbon-Nitrogen Alloys with Low Defect Densities,” Diamond and Related Materials, vol. 9, No. 3, pp. 777-780(4) (Apr. 2000).
Feng et al., “Well-aligned polyaniline-carbon-nanotube composite films grown by in-situ aniline polymerization” Carbon, Elsevier, Oxford, GB, vol. 41, No. 8, Jan. 1, 2003, pp. 1551-1557.
Fu et al., “SiC films grown on silicon by pyrolysis of polymide Langmuir-Blodgett films containing dispersed silicon nanoparticles” Materials Letters, North Holland Publishing Company. Amsterdam, NL, vol. 37, No. 4-5, Nov. 1998, pp. 294-297.
Koltun et al., “Solar Cells from Carbon,” Solar Energy Materials and Solar Cells, vol. 44, No. 4, pp. 485-491(7) (Dec. 15, 1996).
Krishna et al., “Photovoltaic and spectral photoresponse characteristics ofn-C- p-Csolar cell on a p-silicon substrate” Applied Physics Letter, vol. 77, pp. 1427-1429 (2000).
Krishna et al., Photovoltaic Solar Cell from Camphoric Carbon—A Natural Source, Solar Energy and Solar Cells 48 (1997) 25-33.
Krishnal et al., “Solar Cells Based on Carbon Thin Films,” Solar Energy Materials and Solar Cells, vol. 65, No. 1, pp. 163-170(8) (Jan. 2001).
Kureishi et al., “Photoinduced Electron Transfer from Synthetic Chlorophyll Analogue to Fullerene C60 on Carbon Paste Electrode—Preparation of a Novel Solar Cell,” Bioelectrochemistry and Bioenergetics, vol. 48, No. 1, pp. 95-100(6) (Feb. 1999).
Ma et al., “Boron-Doped Diamond-like Amorphous Carbon as Photovoltaic Films in Solar Cell,” Solar Energy Materials and Solar Cells, vol. 69, No. 4, pp. 339-344(6) (Nov. 2001).
Maldei M., et al., “Quantum-Efficiency Measurements on Carbon-Hydrogen-Alloy-Based Solar Cells,” Solar Energy Materials and Solar Cells, vol. 51, No. 3, pp. 433-440(8) (Feb. 27, 1998).
Narayanan et al., “Photovoltaic Effects of a :C-C60-Si (p-i-n) Solar Cell Structures,” Solar Energy Materials and Solar Cells, vol. 75, No. 3, pp. 345-350(6) (Feb. 1, 2003).
Rusop et al., “Photoelectrical properties of pulsed laser deposited boron dropped p-carbon-n-silicon and phosphorus doped n-carbon-p-silicon heterojunction solar cells” Solar Energy, vol. 78 (2005) Pergamon Press. Oxford, GB, pp. 406-415.
Rusop et al., “Nitrogen Doped n-type Amorphous Carbon Films Obtained by Pulsed Laser Deposition with a Natural Camphor Source Target for Solar Cell Applications,” Journal of Physics: Condensed Matter, vol. 17, No. 12, pp. 1929-1946(18) (Mar. 30, 2005).
Sharon, et al., “A Photoelectrochemical Solar Cell from Camphoric p-carbon Semiconductor,” Solar Energy Materials and Solar Cells, vol. 45, No. 1, pp. 35-41(7) (Jan. 1, 1997).
Sharon, et al., “Effect of Pyrolyzing Time and Temperature on the Bandgap of Camphor-Pyrolyzed Semiconducting Carbon Films,” Materials Chemistry and Physics, vol. 56, No. 3, pp. 284-288(5) (Oct. 15, 1998).
Yi et al., “Structural Characterizations and Electrical Properties of Pyrolyzed Polyimide Containing Silicon in the Main Chain,” Synthetic Metals, vol. 126, No. 2, pp. 325-330(6) (Feb. 14, 2002).
Yu et al., “Photovoltaic cell of carbonaceous film-n-type silicon” Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, vol. 68, No. 4, Jan. 22, 1996, pp. 547-549.
International Search Report dated Jun. 17, 2008 issued in the PCT/US2008/054787 application.

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