Methods of making a SRAM cell employing substantially vertically

Details Methods of making a SRAM cell employing substantially vertically Methods of making a SRAM cell employing substantially vertically

1997-07-22

1999-12-07

Niebling, John F.

Semiconductor device manufacturing: process

Making passive device

Resistor

438210, 438238, 438329, 438330, 257536, 257538, H01L 2120

Patent

active

059982764

ABSTRACT:
A method of forming an SRAM cell includes, a) providing a pair of pull-down gates having associated transistor diffusiion regions operatively adjacent thereto, one of the diffusion regions of each pull-down gate being electrically connected to the other pull-down gate; b) providing a pair of pull-up resistor nodes for electrical connection with a pair of respective pull-up resistors, the pull-up nodes being in respective electrical connection with one of the pull-down diffusion regions and the other pull-down gate; c) providing a first electrical insulating layer outwardly of the reistor nodes; d) providing a pair of contact openings, with respective width, through the first insulating layer to the pair of resistor nodes; e) providing a second electrical insulating layer over the first layer and to within the pair of contact openings to a thickness which is less than one-half the open widths; f) anisotropically etching the second electrical insulating layer to define respective electrical insulating annulus spacers received within the respective pair of contact openings and a pair of elongated pull-up resistor openings laterally inward thereof; g) providing electrically conductive material within the pair of elongated pull-up resistor openings in electrical connection with the paor of pull-up resistor nodes to define the pull-up resistors; and h) providing a Vcc line in electrical connection with the pull-up resistors. SRAM circuitry produced according to the above method and by other methods are also comtemplated.

REFERENCES:
patent: 4567609 (1986-01-01), Metcalf
patent: 4933739 (1990-06-01), Harari
patent: 4948747 (1990-08-01), Pfiester
patent: 4951112 (1990-08-01), Choi et al.
patent: 5023727 (1991-06-01), Boyd et al.
patent: 5093706 (1992-03-01), Mitsuhashi et al.
patent: 5117273 (1992-05-01), Stark et al.
patent: 5159430 (1992-10-01), Manning et al.
patent: 5241206 (1993-08-01), Lee et al.
patent: 5262352 (1993-11-01), Woo et al.
patent: 5308782 (1994-05-01), Mazure et al.
patent: 5374573 (1994-12-01), Cooper et al.
patent: 5398200 (1995-03-01), Mazure et al.
patent: 5400277 (1995-03-01), Nowak
patent: 5408130 (1995-04-01), Woo et al.
patent: 5444019 (1995-08-01), Chen et al.
patent: 5474948 (1995-12-01), Yamazaki
patent: 5489796 (1996-02-01), Harward
patent: 5567644 (1996-10-01), Rolfson et al.
patent: 5570311 (1996-10-01), Ema et al.
patent: 5665629 (1997-09-01), Chen et al.
patent: 5683930 (1997-11-01), Batra et al.
patent: 5705843 (1998-01-01), Roberts
patent: 5732023 (1998-03-01), Roberts
patent: 5789316 (1998-08-01), Lu

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