Methods of making a ferroelectric memory device having...

Details Methods of making a ferroelectric memory device having... Methods of making a ferroelectric memory device having...

2011-03-01

2011-03-01

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000, C438S256000, C257S295000, C257S306000

Reexamination Certificate

active

07897413

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a ferroelectric film on a first conductive film by a sol-gel method; forming a first conductive metal oxide film on the ferroelectric film; carrying out a first annealing on the first conductive metal oxide film; forming a second conductive metal oxide film on the first conductive metal oxide film, so that the first and second conductive films serve as a second conductive film; and forming a capacitor by patterning the first conductive film, the ferroelectric film and the second conductive film. In the step of forming the first conductive metal oxide film, ferroelectric characteristics are adjusted with a flow rate ratio of oxygen by utilizing the fact that the ferroelectric characteristics of the ferroelectric film improve as the flow rate ratio of oxygen in a sputtering gas increases.

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