Methods of making a current-perpendicular-to-the-planes...

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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C029S603130, C029S603150, C029S603180, C216S065000, C360S122000, C360S125330, C360S317000, C427S127000, C427S128000, C451S005000, C451S041000

Reexamination Certificate

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07350284

ABSTRACT:
In one particular example, a plurality of CPP type sensor layers are formed over a wafer and a mask without undercuts is formed over the plurality of CPP type sensor layers in a central region. With the mask without undercuts in place, an ion milling process is started to remove CPP type sensor layer materials left exposed by the mask without undercuts in end regions which surround the central region. The ion milling process is stopped at or near a spacer layer of the CPP type sensor layers. Insulator materials are then deposited in the end regions where the CPP type sensor layer materials were removed, followed by hard bias materials over the insulator materials. The mask without undercuts is then removed through use of a chemical-mechanical polishing (CMP) assisted lift-off process, which also planarizes the top surface.

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