Methods of inspecting for mask-defined, feature dimensional conf

Details Methods of inspecting for mask-defined, feature dimensional conf Methods of inspecting for mask-defined, feature dimensional conf

1999-03-19

2000-05-30

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

382144, 382145, 382149, 382151, G03F 900

Patent

active

060689552

ABSTRACT:
Methods of inspecting for mask-defined, feature dimensional conformity between multiple masks which are utilized in lithographic processing are described. In one embodiment, a first mask having a first reference artifact thereon is exposed to conditions effective to transfer the first reference artifact onto a coated substrate. A second mask having a second reference artifact thereon is exposed to conditions effective to transfer the second reference artifact onto the coated substrate. The first and second reference artifacts are inspected to ascertain whether the second reference artifact is within desirable dimensional tolerances relative to the first reference artifact. In a preferred embodiment, the first and second reference artifacts contain at least one feature which defines a critical dimension of a photolithographic process utilized to form the artifacts.

REFERENCES:
patent: 5750990 (1998-05-01), Mizuno et al.
patent: 5798193 (1998-08-01), Pierrat et al.

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