Methods of implementing magnetic tunnel junction current...

Details Methods of implementing magnetic tunnel junction current... Methods of implementing magnetic tunnel junction current...

2007-09-18

2007-09-18

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S318000, C257S295000, C257SE27104

Reexamination Certificate

active

11262054

ABSTRACT:
Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction (“MTJ”) core disposed between a first conductive layer and a second conductive layer. The MTJ core can be used to sense the first current and produce a second current based on the first current sensed at the MTJ core.

REFERENCES:
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6153443 (2000-11-01), Durlam et al.
patent: 6310470 (2001-10-01), Hebing et al.
patent: 6362618 (2002-03-01), Motz
patent: 6429640 (2002-08-01), Daughton et al.
patent: 2002/0024333 (2002-02-01), Maiwald

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