Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-09-02
2000-10-31
Le, Vu A.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438424, 438697, 437 81, H01L 2120
Patent
active
061402001
ABSTRACT:
In one aspect, the invention includes a method of forming a void region associated with a substrate, comprising: a) providing a substrate; b) forming a sacrificial mass over the substrate; c) subjecting the mass to hydrogen to convert a component of the mass to a volatile form; and d) volatilizing the volatile form of the component from the mass to leave a void region associated with the substrate. In another aspect, the invention includes a method of forming a capacitor construction, comprising: a) forming a first capacitor electrode over a substrate; b) forming a sacrificial material proximate the first capacitor electrode; c) forming a second capacitor electrode proximate the sacrificial material, the second capacitor electrode being separated from the first capacitor electrode by the sacrificial material, at least one of the first and second electrodes being a metal-comprising layer; and d) subjecting the sacrificial material to conditions which transport a component from the sacrificial material to the metal-comprising layer, the transported component leaving a void region between the first and second capacitor electrodes.
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Le Vu A.
Luy Pho
Micro)n Technology, Inc.
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