Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-03-14
2006-03-14
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S431000
Reexamination Certificate
active
07012010
ABSTRACT:
In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and then converted, at least some of the silanol, to a compound including at least one of SiOnand RSiOn, where R includes an organic group. An electrically insulative material is formed over the converted silanol to fill the trench. In another aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A first layer of at least one of Si(OH)xand (CH3)ySi(OH)4−yis formed to partially fill the trench. At least some of the Si(OH)xif present is converted to SiO2and at least some of (CH3)ySi(OH)4−yif present is converted to (CH3)xSiO2−x. Next, a layer of an electrically insulative material is formed to fill the trench.
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Doan Trung Tri
Sandhu Gurtej S.
Blum David S.
Micro)n Technology, Inc.
Wells St. John P.S.
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