Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-06-26
2007-06-26
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S437000, C257SE21548
Reexamination Certificate
active
10931524
ABSTRACT:
The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated circuitry such as memory integrated circuitry.
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Dang Trung
Micro)n Technology, Inc.
Wells St. John P.S.
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