Methods of forming trench isolation in the fabrication of...

Details Methods of forming trench isolation in the fabrication of... Methods of forming trench isolation in the fabrication of...

2007-09-25

2007-09-25

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000, C257SE21546

Reexamination Certificate

active

11087218

ABSTRACT:
A method of fabricating integrated circuitry includes depositing a spin-on-dielectric over a semiconductor substrate. The spin-on-dielectric comprises a polysilazane. Only some of the polysilazane is etched from the semiconductor substrate. Such etching comprises exposure to an etching fluid comprising at least one of a) an aqueous fluid having a pH greater than 7.0, or b) a basic fluid solution. After the etching, remaining spin-on-dielectric comprising polysilazane is annealed effective to form an annealed dielectric which is different in composition from the spin-on-dielectric, and preferably having a dielectric constant k which is different from that of the initially deposited spin-on-dielectric.

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Kubo et al.,Formation of Silica coating films from spin-on polysilazane at room temperature and their stability in hot water, 19 J. Mater. Res. No. 2, pp. 635-642 (Feb. 2004).
Shin et al.,Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM, 3 Journal of Semiconductor Technology and Science, No. 2, pp. 69-75 (Jun. 2003).

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