Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-12-18
2010-12-07
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S257000, C438S301000, C438S717000, C257SE21039
Reexamination Certificate
active
07846812
ABSTRACT:
A method of forming trench isolation includes etching first trench lines into semiconductive material of a semiconductor substrate. First isolation material is formed within the first trench lines within the semiconductive material. After forming the first isolation material within the first trench lines, second trench lines are etched into semiconductive material of the substrate between the first trench lines such that the first trench lines and second trench lines alternate. Second isolation material is formed within the second trench lines within the semiconductive material. Alternate and additional aspects are contemplated.
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Choi Calvin
Micro)n Technology, Inc.
Mulpuri Savitri
Wells St. John P.S.
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