Batteries: thermoelectric and photoelectric – Thermoelectric – Processes
Reexamination Certificate
2006-06-22
2010-11-23
Michener, Jennifer K (Department: 1795)
Batteries: thermoelectric and photoelectric
Thermoelectric
Processes
C438S054000, C136S212000
Reexamination Certificate
active
07838759
ABSTRACT:
A method of forming a thermoelectric device may include forming a pattern of conductive traces, and forming an electrically insulating matrix between the conductive traces of the pattern of conductive traces. In addition, a plurality of thermoelectric elements may be electrically and mechanically coupled to the pattern of conductive traces so that each conductive trace of the pattern of conductive traces has one of the plurality of thermoelectric elements thereon. In addition, the plurality of thermoelectric elements may be free of the electrically insulating matrix. Related methods and structures are also discussed.
REFERENCES:
patent: 3136134 (1964-06-01), Smith
patent: 3296034 (1967-01-01), Reich
patent: 3607444 (1971-09-01), DeBucs
patent: 3663307 (1972-05-01), Mole
patent: 4443650 (1984-04-01), Takagi et al.
patent: 5006178 (1991-04-01), Bijvoets
patent: 5254178 (1993-10-01), Yamada et al.
patent: 5429680 (1995-07-01), Fuschetti
patent: 5430322 (1995-07-01), Koyanagi et al.
patent: 5436467 (1995-07-01), Elsner et al.
patent: 5837929 (1998-11-01), Adelman
patent: 5865975 (1999-02-01), Bishop
patent: 5869242 (1999-02-01), Kamb
patent: 5874219 (1999-02-01), Rava et al.
patent: 5897330 (1999-04-01), Watanabe et al.
patent: 5900071 (1999-05-01), Harman
patent: 5922988 (1999-07-01), Nishimoto
patent: 6060331 (2000-05-01), Shakouri et al.
patent: 6060657 (2000-05-01), Harman
patent: 6062681 (2000-05-01), Field et al.
patent: 6071351 (2000-06-01), Venkatasubramanian
patent: 6072925 (2000-06-01), Sakata
patent: 6084050 (2000-07-01), Ooba et al.
patent: 6094919 (2000-08-01), Bhatia
patent: 6154266 (2000-11-01), Okamoto et al.
patent: 6154479 (2000-11-01), Yoshikawa et al.
patent: 6180351 (2001-01-01), Cattell
patent: 6271459 (2001-08-01), Yoo
patent: 6282907 (2001-09-01), Ghoshal
patent: 6300150 (2001-10-01), Venkatasubramanian
patent: 6365821 (2002-04-01), Prasher
patent: 6384312 (2002-05-01), Ghoshal et al.
patent: 6403876 (2002-06-01), Ghoshal et al.
patent: 6410971 (2002-06-01), Otey
patent: 6412286 (2002-07-01), Park et al.
patent: 6505468 (2003-01-01), Venkatasubramanian
patent: 6605772 (2003-08-01), Harman et al.
patent: 6696635 (2004-02-01), Prasher
patent: 6787691 (2004-09-01), Fleurial et al.
patent: 2001/0052234 (2001-12-01), Venkatasubramanian
patent: 2002/0024154 (2002-02-01), Hara et al.
patent: 2002/0053359 (2002-05-01), Harman et al.
patent: 2002/0069906 (2002-06-01), Macris
patent: 2002/0139123 (2002-10-01), Bell
patent: 2005/0045702 (2005-03-01), Freeman et al.
patent: 2005/0060884 (2005-03-01), Okamura et al.
patent: 2006/0076046 (2006-04-01), Ghoshal
patent: 0 482 215 (1992-04-01), None
patent: 0 687 020 (1995-12-01), None
patent: 0 805 501 (1997-11-01), None
patent: 6-97512 (1994-04-01), None
patent: 2002 374010 (2002-12-01), None
patent: WO98/43740 (1998-10-01), None
patent: WO98/44562 (1998-10-01), None
patent: WO 00/49664 (2000-08-01), None
patent: WO 01/08800 (2001-02-01), None
patent: WO 2004/105146 (2004-12-01), None
International Search Resort and Written Opinion for PCT/US2006/024395; Feb. 4, 2008.
US 6,381,965, 05/2002, (withdrawn).
Development of Low-Bandgap Ge and SI0.07Ge0.03Solar Cells for Monolithic and Mechanically-Stacked Cascade Applications, Rama Venkatasubramanian et al., pp. 73-78.
Fields, S., Proteomics in Genomeland, Science vol. 291 No. 5507 pp. 1221-1224, pp. 1-7.
Graded-Band-GAP AlGaAs Solar Cells for AlGaAs/Ge Cascade Cells, M.L. Timmons, et al., pp. 68-72.
Fitch, J. Patrick, Bahrand Sokhansanj, IEEE, Genomic Engineering: Moving Beyond DNA Sequence to Function, Proceedings of the IEEE, vol. 88, No. 12, Dec. 2000, pp. 1949-1971.
Hofmeister, Rudolf et al., New Photorefractive Mechanism in Centrosymmetric Crystals: A Strain-Coordinated Jahn-Teller Relaxation, Physical Review Letters, vol. 69, No. 9, Aug. 31, 1992, pp. 1459-1462.
Samuel K. Moore, Making Chips, IEEE Spectrum, Biotechnology, Mar. 2001, pp. 54-60.
Photoexcited Carrier Lifetimes and Spatial Transport in Surface-free GaAS Homostructures, L.M. Smith et al., J. Vac. Sci. Technol. B, vol. 8, No. 4 Jul./Aug. 1990, pp. 787-792.
Ideal Electronic Properties of a p-Ge/p-Al0.85Ga0.15As Interface, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 3, Jul. 15, 1991, pp. 318-320.
Selective Plasma Etching of Ge Substrates for Thin Freestanding GaAs-AlGaAs Heterostructures, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 17, Oct. 21, 1991, pp. 2153-2155.
Visible Light Emission From Quantized Planar Ge Structures, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 13, Sep. 23, 1991, pp. 1603-1605.
GaInAsP Lattice Matched to GaAs for Solar Cell Applications, P.R. Sharps, et al., Research Triangle Institute, P.O. Box 12194, RTP, NC 27709. pp. 315-317.
High-Temperature Performance and Radiation Resistance of High-Efficiency Ge and Si0.07Ge0.03Solar Cells on Lightweight Ge Substrates, Rama Venkatasubramanian et al., pp. 85-98.
Physical Basis and Characteristics of Light Emission From Quantized Planar Ge Structures, Rama Venkatasubramanian, et al., pp. 15.4.1-15.4.4.
High Quality GaAs on Si Using Si0.04Ge0.96/Ge Buffer Layers, Rama Venkatasbramanian, et al., Journal of Crystal Growth 107 (1991) pp. 489-493.
The New Face of A.I., Michael Powell, Merger Maniac Europe's CD Underworld, The Supercheap Future of Flying, Mar. 2002, Hacking the Racetrack, Insife Nuke University, Wired, A New Kind of Cool, Rama Venkatasubramanian.
Optimization of the Heteroepitaxy of Ge on GaAs for Minority-Carrier Lifetime, Rama Venkatasubramanian, et al., Jouranl of Crystal Growth 112 (1991) pp. 7-13, Received Aug. 9, 1990; manuscript received in final form Dec. 14, 1990.
Intrinsic Recombination and Interface Characterization in “surface-free” GaAs Structures, D.J. Wolford et al., J. Vac. Sci. Technol. B. vol. 9, No. 4, Jul./Aug. 1991, pp. 2369-2376.
Advances in the Development of an AlGaAs/GaAs Cascade Solar Cell Using a Patterned Germanium Tunnel Interconnect, Rama Venkatasubramanian et al., pp. 345-354.
High-Quality Eutectic-Metal-Bonded AlGaAs-GaAs Thin Films on Si Substrates, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 60, No. 7, Feb. 17, 1992, pp. 886-888.
Photoluminescence of Porous Silicon Buried Underneath Epitaxial GaP, J.C., Campbell, et al., Appl. Phys. Lett., vol. 60, No. 7, Feb. 17, 1992, pp. 889-891.
Interface-Free GaAs Structures—From Bulk to the Quantum Limit, D.J. Wolford, et al, Inst. Phys. Conf. Ser. No. 120: Chapter 9, pp. 401-406.
Properties and Use of Cycled Grown OMVPE GaAs: Zn, GaAS:Se, and GaAS:Si Layers for High-Conductance GaAS Tunnel Junctions, Rama Venkatasubramanian et al., National Renewable Energy Laboratory, Golden, CO 80401, pp. 893-899.
Thermal Characterization of Bi2, Te3/Sb3Te3Superlattices, M.N. Touzelbaev and P. Zhou, Department of Mechanical Engineering, Stanford University, Stanford, California 94305-3030, Rama Venkatasubramanian, Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, Durham, NC 27709-2195, K.E. Goodson Electronic mail goodson@vk.stanford.edu, Journal of Applied Physics, vol. 90, No. 2, Jul. 15, 2001, pp. 763-767.
Smaller, Faster, Efficient Thermoelectric Cooling, Rama Venkatasubramanian, vol. 30, No. 41, Oct. 17, 2001 ISSN: 0300-757X, pp. 1-2.
CVD Diamond for Components and Emitters, J. Davidson, Corresponding Author, e-mail address: jld@vuse.vanderbilt.edu (J. Davidson) et al., Vanderbilt University 2201 West End Avenue, Nashville, TN 37235, USA, Diamond and Related Materials 10 (2001) pp. 1736-1742.
Sneak Preview, Optical Device Transfers Data Fast, Rama Venkatasubramanian, design news Dec. 17, 2001. p. 14.
Lattice Thermal Conductivity Reduction and Phonon Localizationlike Behavior in Superlattice Structures, Rama Venkatasubramanian, Research Triangle Institute, Research Triangle Park, North Carolina 27709, Physical Review B., vol. 61, No. 4, Jan. 15, 2000-II, pp. 3091-3097.
Phonon-Blocking Electron-Transmitting Structures, Rama Venkatasubramanian et al., Research Triangle Institute, Research Triangle Park, NC, USA, 18 International Conference on Thermo
Alley Randall G.
Koester David A.
Mershon Jayne
Michener Jennifer K
Myers Bigel Sibley & Sajovec P.A.
Nextreme Thermal Solutions, Inc.
LandOfFree
Methods of forming thermoelectric devices including... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming thermoelectric devices including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming thermoelectric devices including... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4245521