Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-05-01
2007-05-01
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE21546
Reexamination Certificate
active
11362455
ABSTRACT:
A method of forming a silicon dioxide layer includes forming a high density plasma proximate a substrate, the plasma comprising silicon dioxide precursors; forming silicon dioxide from the precursors, the silicon dioxide being deposited over the substrate at a deposition rate; and while depositing, etching the deposited silicon dioxide with the plasma at an etch rate; a ratio of the deposition rate to the etch rate being at least about 4:1. Another method includes forming a high density plasma proximate a substrate; flowing gases into the plasma, at least some of the gases forming silicon dioxide; depositing the silicon dioxide formed from the gases over the substrate; and while depositing the silicon dioxide, maintaining a temperature of the substrate at greater than or equal to about 500° C. As an alternative, the method may include not cooling the substrate with a coolant gas while depositing the silicon dioxide.
REFERENCES:
patent: 4839306 (1989-06-01), Wakamtsu
patent: 5270264 (1993-12-01), Andideh et al.
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5494854 (1996-02-01), Jain
patent: 5531834 (1996-07-01), Ishizuka et al.
patent: 5614055 (1997-03-01), Fairairn et al.
patent: 5660895 (1997-08-01), Lee et al.
patent: 5679606 (1997-10-01), Wang et al.
patent: 5726090 (1998-03-01), Jang et al.
patent: 5726097 (1998-03-01), Yanagida
patent: 5731241 (1998-03-01), Jang et al.
patent: 5763315 (1998-06-01), Benedict et al.
patent: 5872058 (1999-02-01), Van Cleemput
patent: 5966616 (1999-10-01), Woerlee
patent: 5968610 (1999-10-01), Liu et al.
patent: 5976993 (1999-11-01), Ravi et al.
patent: 6013584 (2000-01-01), M'Saad
patent: 6015759 (2000-01-01), Khan et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6077786 (2000-06-01), Chakravarti et al.
patent: 6103601 (2000-08-01), Lee et al.
patent: 6110544 (2000-08-01), Yang et al.
patent: 6114216 (2000-09-01), Yieh et al.
patent: 6136685 (2000-10-01), Narwankar et al.
patent: 6140208 (2000-10-01), Agahi et al.
patent: 6153509 (2000-11-01), Watanabe
patent: 6165854 (2000-12-01), Wu
patent: 6174785 (2001-01-01), Parekh et al.
patent: 6180490 (2001-01-01), Vassiliev et al.
patent: 6194038 (2001-02-01), Rossman
patent: 6217721 (2001-04-01), Xu et al.
patent: 6228775 (2001-05-01), Coburn et al.
patent: 6255211 (2001-07-01), Olsen et al.
patent: 6286451 (2001-09-01), Ishikawa et al.
patent: 6313010 (2001-11-01), Nag et al.
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6346302 (2002-02-01), Kishimoto
patent: 6444037 (2002-09-01), Frankel et al.
patent: 6593241 (2003-07-01), Abraham et al.
patent: 6737328 (2004-05-01), Sharan et al.
patent: 6759306 (2004-07-01), Sharan et al.
patent: 7018908 (2006-03-01), Sharan et al.
patent: 843348 (1997-11-01), None
patent: 07-76777 (1995-03-01), None
patent: 8-8232 (1996-01-01), None
patent: 11-154673 (1999-06-01), None
patent: WO97/24761 (1997-07-01), None
Gross, M., “Silicon Dioxide Trench Filing Process in a Radio-Frequency Hollow Cathode Reacto”, J. Vac. Sci. Tech., B11(2), Mar./Apr. 1993, No. 2, pp. 242-248.
Lee et al., “A Low Redeposition Rate High Density Plasma CVD Process for High Aspect Ratio 175 nm Technology and Beyond”, IITC 99, pp. 152-154 0-7803-5174-6/99, IEEE.
Jung et al., “Enhancing uniformity of borderless VIA resistance by HDP oxide technology”, ST-P06 07-803-5727-2/99, pp. 452-455.
Sandhu Gurtej S.
Sharan Sujit
Micro)n Technology, Inc.
Sarkar Asok Kumar
Wells St. John P.S.
LandOfFree
Methods of forming silicon dioxide layers, and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming silicon dioxide layers, and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming silicon dioxide layers, and methods of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3781131