Methods of forming semiconductor constructions

Details Methods of forming semiconductor constructions Methods of forming semiconductor constructions

2006-02-21

2006-02-21

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S262000, C438S381000

Reexamination Certificate

active

07001779

ABSTRACT:
The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from over the block while leaving portions of the first and second layers over the region proximate the block. At least some of the first layer is removed from under the second layer to form a channel over the region proximate the block. A material, such as a soft magnetic material, is provided within the channel. The invention also includes semiconductor constructions.

REFERENCES:
patent: 5266530 (1993-11-01), Bagley et al.
patent: 6235638 (2001-05-01), Huang et al.
patent: 6577529 (2003-06-01), Sharma et al.
patent: 2002/0105035 (2002-08-01), Sandhu et al.
WEBSITE: http://digilander.iol.it/paeng/what—mu—metal.htm, “What's μ-metal?”, printed Feb. 26, 2002, 2 pages.
WEBSITE: http://www.sciencenet.org.uk/database/Physics/9812/p01213d.html, “Physics & Astronomy: What's mu metal?”, printed Feb. 26, 2002, 1 pg.

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