Methods of forming semiconductor circuitry

Details Methods of forming semiconductor circuitry Methods of forming semiconductor circuitry

2005-03-01

2005-03-01

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S162000, C438S480000, C438S517000, C438S933000, C257S347000, C257S505000, C257S520000

Reexamination Certificate

active

06861326

ABSTRACT:
The invention includes a method of forming semiconductor circuitry. A monocrystalline silicon substrate is provided, and a mask is formed which covers a first portion of the substrate and leaves a second portion uncovered. A trench is formed in the uncovered portion and at least partially filled with a semiconductive material that comprises at least one atomic percent of an element other than silicon. The mask is removed and a first semiconductor circuit component is formed over the first portion of the substrate. Also, a second semiconductor circuit component is formed over the semiconductive material that at least partially fills the trench. The invention also includes semiconductor constructions.

REFERENCES:
patent: 5759908 (1998-06-01), Steckl et al.
patent: 5891769 (1999-04-01), Liaw et al.
patent: 5999675 (1999-12-01), Sugiyama
patent: 6358806 (2002-03-01), Puchner
patent: 6462381 (2002-10-01), Beebe et al.
patent: 6544854 (2003-04-01), Puchner et al.
patent: 6555891 (2003-04-01), Furukawa et al.
patent: 6620671 (2003-09-01), Wang et al.
patent: 20010008292 (2001-07-01), Leobandung et al.
patent: 20010045604 (2001-11-01), Oda et al.
patent: 20020019105 (2002-02-01), Hattori et al.
patent: 20020086557 (2002-07-01), Matsumura et al.
patent: 20020182423 (2002-12-01), Chu et al.
patent: 20030062586 (2003-04-01), Wallace et al.
patent: 10270746 (1998-10-01), None
patent: 11177122 (1999-07-01), None

Affiliated with

Also associated with

Rating

Methods of forming semiconductor circuitry does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming semiconductor circuitry, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming semiconductor circuitry will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3402418