Optical waveguides – Planar optical waveguide – Thin film optical waveguide
Patent
1996-11-26
1998-11-24
Ullah, Akm E.
Optical waveguides
Planar optical waveguide
Thin film optical waveguide
427571, G02B 610
Patent
active
058419314
ABSTRACT:
Methods of forming polycrystalline semiconductor waveguides include the steps of forming a first cladding layer (e.g., SiO.sub.2) on a substrate (e.g., silicon) and then forming a polycrystalline semiconductor layer (e.g., poly-Si) on the first cladding layer using a direct deposition technique or by annealing amorphous silicon (a-Si) to form a polycrystalline layer, for example. The deposited polycrystalline semiconductor layer can then be polished at a face thereof to have a root-mean-square (RMS) surface roughness of less than about 6 nm so that waveguides patterned therefrom have loss ratings of better than 35 dB/cm. The polished polycrystalline semiconductor layer is then preferably etched in a plasma to form a plurality of polycrystalline strips. A second cladding layer is then formed on the polycrystalline strips to form a plurality of polycrystalline waveguides which provide relatively low-loss paths for optical communication between one or more optoelectronic devices coupled thereto. The annealed amorphous silicon layer or deposited polycrystalline layer can also be hydrogenated by exposing the second cladding layer to a hydrogen containing plasma at a temperature and pressure of about 350.degree. C. and 0.16 mTorr, respectively, and for a duration in a range between about 30 and 60 minutes. This further improves the loss ratings of the waveguides to about 15 dB/cm or less.
REFERENCES:
patent: 4111725 (1978-09-01), Cho et al.
patent: 4715672 (1987-12-01), Duguay et al.
patent: 4716559 (1987-12-01), Hine
patent: 4728167 (1988-03-01), Soref et al.
patent: 4781424 (1988-11-01), Kawachi et al.
patent: 4787691 (1988-11-01), Lorenzo et al.
patent: 4789642 (1988-12-01), Lorenzo et al.
patent: 4862237 (1989-08-01), Morozumi
patent: 4884122 (1989-11-01), Eichelberger et al.
patent: 4978188 (1990-12-01), Kawachi et al.
patent: 5035916 (1991-07-01), Kalnitsky et al.
patent: 5051786 (1991-09-01), Nicollian et al.
patent: 5059475 (1991-10-01), Sun et al.
patent: 5064775 (1991-11-01), Chang
patent: 5238877 (1993-08-01), Russell
patent: 5263111 (1993-11-01), Nurse et al.
patent: 5274246 (1993-12-01), Hopkins et al.
patent: 5279686 (1994-01-01), Nishida
patent: 5303319 (1994-04-01), Ford et al.
patent: 5394490 (1995-02-01), Kato et al.
patent: 5508555 (1996-04-01), Brotherton et al.
patent: 5528053 (1996-06-01), Schwaklke
patent: 5681402 (1997-10-01), Ichinose et al.
Jones, Jr. et al., Electrical, Thermoelectric, And Optical Properties Of Strongly Degenerate Polycrystalline Silicon Films,J. Appl. Phys., vol. 56, No. 6, Sep. 15, 1984, pp. 1701-1706.
Seager et al., Dangling Bonds And The Urbach Tail In Silicon.sup.a), J. Appl. Phys., vol. 58, No. 7, Oct. 1, 1985, pp. 2704-2708.
Jackson et al., Direct Measurement Of Gap-State Absorption In Hydrogenated Armorphous Silicon By Photothermal Deflection Spectroscopy, Physical Review B, vol. 25, No. 8, Apr. 15, 1982, pp. 5559-5562.
Jackson et al., Density Of Gap States Of Silicon Grain Boundaries Determined By Optical Absorption, Appl. Phys. Lett., vol. 43, No. 2, Jul. 15, 1983, pp. 195-197.
Emmons et al., Buried-Oxide Silicon-on-Insulator Structures I: Optical Waveguide Characteristics, IEEE Journal of Quantum Electronics, vol. 28, No. 1, Jan. 1992, pp. 157-163.
Weiss et al., The Transmission Properties Of Optical Waveguides In SIMOX Structures, Optical and Quantum Electronics, vol. 23, 1991 pp. 1061-1065.
Soref et al., All-Silicon Active and Passive Guided-Wave Components For .lambda.=1.3 and 1.6 .mu.m, IEEE Journal of Quantum Electronics, vol. QE-22, No. 6, Jun. 1986, pp. 873-879.
Asakawa et al., Three-Dimensional Optical Interconnects By Stacked Arrow Waveguides, Electronics Letters, vol. 29, Jun. 29, 1993, pp. 1485-1486.
Soref et al., Vertically Integrated Silicon-on-Insulator Waveguides, IEEE Photonics Technology Letters, vol. 3, No. 1, Jan.1991, pp. 22-24.
Rickman et al., Low-Loss Planar Optical Waveguides Fabricated In SIMOX Material, IEEE Photonics Technology Letters, vol. 4, No. 6, Jun. 1992, pp. 633-635.
Zhao et al., Silicon On Insulator Mach-Zehnder Waveguide Interferometers Operating At 1.3 .mu.m, Appl. Phys. Lett. , vol. 67, No., 17, Oct. 23, 1995, pp. 2448-2449.
Adar et al., Measurement Of Very Low-Loss Silica On, Silicon Waveguides With A Ring Resonator, Appl. Phys. Lett. vol. 58, No. 5, Feb. 4, 1991, pp. 444-445.
Weiss et al., Optical Waveguides In SIMOX Structures, IEEE Photonics Technology Letters, vol. 3, No. 1, Jan. 1991, pp. 19-21.
Hunsperger, Springer Series in Optica Sciences, Integrated Optics: Theory and Technology, Second Edition, pp. 1-44.
Wu et al., Photodector Arrays In Laser-Recrystallized Silicon Integrated With An Optical Waveguide, Mat. Res. Soc. Symp. Proc., vol. 35, 1985 Materials Research Society, pp. 675-680.
Hilleringmann et al., Optoelectronic System Integration On Silicon: Waveguides, Photodectors, And VLSI CMOS Circuits On One Chip, IEEE Transactions On Electron Devices, vol. 42, No. 5, May 1995, pp. 841-846.
Kurdi et al., Optical Waveguides In Oxygen-Implanted Buried-Oxide Silicon-On-Insulator Structures, Optics Letters, vol. 13, No. 2, Feb. 1988, pp. 175-177.
Kokubun et al, Low-Loss Antiresonant Reflecting Optical Waveguide On Si Substrate In Visible-Wavelength Region, Electronics Letters, vol. 22, Jun. 30, 1986, pp. 892-893.
Schmidtchen et al., Low Loss Singlemode Optical Waveguides With Large Cross-Section In Silicon-On-Insulator, Electronics Letters, vol. 27, Jun. 12, 1991, pp. 1486-1487.
Lim, Simulation Of Single Mode Si Waveguides And Electro-Optic Coupling Modulators, Bachelor of Science in Electrical Science & Engineering at the Massachusetts Institute of Technology, May 1994, pp. 5-90.
Foresi et al., Losses In Polycrystalline Silicon Waveguides, Appl. Phys. Lett., vol. 68, No. 15, Apr. 8, 1996, pp. 2052-2054.
P.K. Tien ,Light Waves In Thin Films An Integrated Optics, Applied Optics, vol. 10, No. 11, Nov. 1971, pp. 2395-2413.
Agarwal Anu M.
Black Marcie R.
Foresi James S.
Kimerling Lionel C.
Koker Debra M.
Massachusetts Institute of Technology
Ullah Akm E.
LandOfFree
Methods of forming polycrystalline semiconductor waveguides for does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming polycrystalline semiconductor waveguides for , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming polycrystalline semiconductor waveguides for will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1712368