Methods of forming openings

Details Methods of forming openings Methods of forming openings

2007-07-12

2010-11-09

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C257SE21257

Reexamination Certificate

active

07829369

ABSTRACT:
Some embodiments include methods of forming openings in which a metal-containing structure is formed over a region of a semiconductor substrate. A patterned metal-containing material is formed over the metal-containing structure, with the metal-containing material having a gap extending therethrough. An entirety of the metal-containing structure is removed through the gap to leave an opening over the region of the semiconductor substrate. The region of the semiconductor substrate may comprise CMOS sensors, and one or both of filter material and microlens material may be formed within the opening.

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