Methods of forming multi-chip semiconductor substrates

Details Methods of forming multi-chip semiconductor substrates Methods of forming multi-chip semiconductor substrates

2011-01-18

2011-01-18

Chambliss, Alonzo (Department: 2892)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S109000, C438S113000, C438S458000, C438S459000, C438S462000, C257S686000, C257S724000, C257S777000, C361S784000, C361S079000, C361S792000

Reexamination Certificate

active

07871857

ABSTRACT:
Methods of forming multi-chip semiconductor substrates include forming a first plurality of dicing streets in a first surface of a first semiconductor wafer having a first plurality of bonding sites thereon and forming a second plurality of dicing streets in a first surface of a second semiconductor wafer having a second plurality of bonding sites thereon. The first surfaces of the first and second semiconductor wafers are bonded together so that the first plurality of dicing streets are aligned with the second plurality of dicing streets and the first plurality of bonding sites are matingly received and permanently affixed within the second plurality of bonding sites. A plurality of bonded pairs of semiconductor chips are then formed by planarizing the second surface of the second semiconductor wafer until the second plurality of dicing streets are exposed.

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“Wafer dicing,” http://en.wikipedia.org/wiki/Wafer—dicing, printed Aug. 11, 2008, 1 page, Admitted Prior Art.
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