Methods of forming metallization patterns on beam lead semicondu

Details Methods of forming metallization patterns on beam lead semicondu Methods of forming metallization patterns on beam lead semicondu

1975-12-22

1977-03-08

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

29591, 204 40, C25D 502, C25D 712

Patent

active

040111440

ABSTRACT:
Methods of forming conductive paths including beam leads on a surface of a semiconductor wafer includes the deposition of conductive films of materials such as titanium and platinum on the surface as a base for a subsequent deposition of a metal, such as gold. By selectively etching the titanium and platinum films, patterns of the desired conductors are generated. An intermediate masking step shields the surface of the wafer while the beam leads are plated prior to gold plating the remaining conductors of the pattern.

REFERENCES:
patent: 2823175 (1958-02-01), Roschen
patent: 3287612 (1966-11-01), Lepselter
patent: 3343256 (1967-09-01), Smith et al.
patent: 3388048 (1968-06-01), Szabo, Jr.
patent: 3426252 (1969-02-01), Lepselter
patent: 3536594 (1970-10-01), Pritchard
patent: 3625837 (1971-12-01), Nelson et al.
patent: 3701705 (1972-10-01), Hetrich
patent: 3745094 (1973-07-01), Greene
patent: 3759767 (1973-09-01), Walls
patent: 3841930 (1974-10-01), Hetrich
The Western Electric Engineer, vol. XI, No. 4, Dec. 1967, pp. 3-15.

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