Methods of forming metal nitride, and methods of forming...

Details Methods of forming metal nitride, and methods of forming... Methods of forming metal nitride, and methods of forming...

2006-12-12

2006-12-12

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C438S627000, C257SE21006

Reexamination Certificate

active

07148118

ABSTRACT:
The invention encompasses methods of forming metal nitride proximate dielectric materials. The metal nitride comprises two portions, with one of the portions being nearer the dielectric material than the other. The portion of the metal nitride nearest the dielectric material is formed from a non-halogenated metal-containing precursor, and the portion of the metal nitride further from the dielectric material is formed from a halogenated metal-containing precursor. The methodology of the present invention can be utilized for forming capacitor constructions, with the portion of the metal nitride formed from the halogenated metal-containing precursor being incorporated into a capacitor electrode.

REFERENCES:
patent: 6287965 (2001-09-01), Kang et al.
patent: 6348376 (2002-02-01), Lim et al.
patent: 6590251 (2003-07-01), Kang et al.
patent: 2001/0043453 (2001-11-01), Narwankar et al.

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