Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2008-01-01
2008-01-01
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S785000, C257SE21010, C257SE21021
Reexamination Certificate
active
11097404
ABSTRACT:
A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a metal-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.
REFERENCES:
patent: 5374578 (1994-12-01), Patel et al.
patent: 5440157 (1995-08-01), Imai et al.
patent: 5641702 (1997-06-01), Imai et al.
patent: 6063639 (2000-05-01), Kim et al.
patent: 6201276 (2001-03-01), Agarwal et al.
patent: 6509200 (2003-01-01), Koyanagi
patent: 6670256 (2003-12-01), Yang et al.
patent: 6995071 (2006-02-01), Oh et al.
patent: 2002/0106536 (2002-08-01), Lee et al.
patent: 2002/0137239 (2002-09-01), Koyanagi
patent: 2002/0190294 (2002-12-01), Iizuka et al.
patent: 2002/0195643 (2002-12-01), Harada
patent: 2004/0009678 (2004-01-01), Asai et al.
patent: 2004/0011380 (2004-01-01), Ji et al.
patent: 2004/0043569 (2004-03-01), Ahn et al.
patent: 10-1997-0018537 (1997-04-01), None
patent: 1020000045296 (2000-07-01), None
patent: 1020010017212 (2001-03-01), None
patent: 1020010060981 (2001-07-01), None
patent: 1020020034710 (2002-05-01), None
patent: 10-2003-0002022 (2003-01-01), None
patent: 1020030005021 (2003-01-01), None
Notice to Submit a Response for Korean Patent Application No. 10-2004-0024888 mailed on Dec. 14, 2005.
Notice to Submit a response for Korean Patent Application No. 10-2003-0029368 mailed Apr. 29, 2005.
Boulos “New Frontiers in Thermal Plasma Processing”Pure & Applied Chemistry68(5): 1007-1010 (1996).
Choi Jae-hyoung
Choi Jeong-sik
Chung Jeong-hee
Kim Ki-chul
Kim Sung-tae
Dang Trung
Myers Bigel Sibley & Sajovec P.A.
LandOfFree
Methods of forming metal-insulator-metal (MIM) capacitors... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming metal-insulator-metal (MIM) capacitors..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming metal-insulator-metal (MIM) capacitors... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3946886