Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2005-05-24
2008-11-11
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S253000, C438S257000, C438S593000, C438S508000
Reexamination Certificate
active
07449390
ABSTRACT:
Methods of forming memory are described. According to one arrangement, a method of forming memory includes forming a plurality of word lines over a substrate, the word lines having insulating material thereover, forming a plurality of bit lines over the word lines, the bit lines having insulating material thereover, forming insulative material over the word lines and the bit lines, the insulative material being etchably different from the insulating material over the word lines and the insulating material over the bit lines, and selectively etching contact openings through the insulative material relative to the insulating material over the bit lines and the insulating material over the word lines, the openings being self-aligned to both the bit lines and word lines and extending to proximate the substrate.
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Le Dung A.
Micro)n Technology, Inc.
Wells St. John P.S.
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