Methods of forming mask patterns on semiconductor wafers...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S700000, C438S717000, C438S723000

Reexamination Certificate

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07541290

ABSTRACT:
Methods of forming integrated circuit devices include steps to selectively widen portions of a mask pattern extending adjacent an outer edge of a semiconductor wafer. These steps to selectively widen portions of the mask pattern are performed so that more uniform center-to-edge critical dimensions (CD) can be achieved when the mask pattern is used to support photolithographically patterning of underlying layers (e.g., insulating layers, antireflective coatings, etc.).

REFERENCES:
patent: 5856240 (1999-01-01), Sinha et al.
patent: 6458688 (2002-10-01), Wenski et al.
patent: 6537677 (2003-03-01), Mercaldi et al.
patent: 6663708 (2003-12-01), Morita et al.
patent: 6846618 (2005-01-01), Hsu et al.
patent: 6847014 (2005-01-01), Benjamin et al.
patent: 6940150 (2005-09-01), Watanabe
patent: 2002/0102860 (2002-08-01), Mercaldi et al.
patent: 2002/0197749 (2002-12-01), Knight et al.
patent: 2006/0284261 (2006-12-01), Sriram
patent: 2007/0042603 (2007-02-01), Kropewnicki et al.
patent: 10-150019 (1998-06-01), None
patent: 2002-367899 (2002-12-01), None
patent: 2003-017559 (2003-01-01), None
patent: 2003-297725 (2003-10-01), None
patent: 2004-119497 (2004-04-01), None
patent: 10-0252210 (2000-01-01), None
patent: 1020010003781 (2001-01-01), None
patent: 1020010095798 (2001-11-01), None
patent: 1020030003649 (2003-01-01), None
patent: 1020040076138 (2004-08-01), None
patent: 1020050096391 (2005-10-01), None

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