Methods of forming magnetic shielding for a thin-film memory...

Details Methods of forming magnetic shielding for a thin-film memory... Methods of forming magnetic shielding for a thin-film memory...

2007-01-23

2007-01-23

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S257000, C365S158000

Reexamination Certificate

active

10992984

ABSTRACT:
A monolithically formed ferromagnetic thin-film memory is disclosed that has local shielding on at least two sides of selected magnetic storage elements. The local shielding preferably extends along the back and side surfaces of a word line and/or digital lines of a conventional magnetic memory. In this configuration, the local shielding not only may help reduce externally generated EMI, internally generated cross-talk and other unwanted fields in the magnetic bit region, but may also help enhance the desired magnetic fields in the bit region.

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