Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2009-12-08
2011-10-04
Hoang, Quoc (Department: 2892)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE21540
Reexamination Certificate
active
08030170
ABSTRACT:
Some embodiments include methods of forming isolation structures. A trench may be formed to extend into a semiconductor material. Polysilazane may be formed within the trench, and then exposed to steam. A maximum temperature of the polysilazane during the steam exposure may be less than or equal to about 500° C. The steam exposure may convert all of the polysilazane to silicon oxide. The silicon oxide may be annealed under an inert atmosphere. A maximum temperature of the silicon oxide during the annealing may be from about 700° C. to about 1000° C. In some embodiments, the isolation structures are utilized to isolate nonvolatile memory components from one another.
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Beaman Kevin L.
Ho Yunjun
Light Gregory J.
Meyers Matt
Hoang Quoc
Micro)n Technology, Inc.
Wells St. John P.S.
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