Methods of forming isolated active areas, trenches, and...

Details Methods of forming isolated active areas, trenches, and... Methods of forming isolated active areas, trenches, and...

2011-08-02

2011-08-02

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C257S244000

Reexamination Certificate

active

07989307

ABSTRACT:
Methods of pitch doubling of asymmetric features and semiconductor structures including the same are disclosed. In one embodiment, a single photolithography mask may be used to pitch double three features, for example, of a DRAM array. In one embodiment, two wordlines and a grounded gate over field may be pitch doubled. Semiconductor structures including such features are also disclosed.

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