Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-01-09
2007-01-09
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S526000
Reexamination Certificate
active
10925079
ABSTRACT:
This invention includes methods of forming integrated circuits, and includes DRAM circuitry memory cells. In one implementation, a method of forming an integrated circuit includes forming a trench isolation mask over a semiconductor substrate. The trench isolation mask defines an active area region and a trench isolation region. An ion implantation is conducted into semiconductive material of the substrate to form a buried region within active area of the substrate. The buried region has a first edge received proximate an edge of the trench isolation region. Using the trench isolation mask, etching is conducted into semiconductive material of the substrate to form an isolation trench. After the ion implantation and after forming the isolation trench, insulative material is formed within the buried region and insulative material is deposited to within the isolation trench. The insulative material received within the isolation trench joins with the insulative material formed within the buried region.
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Mouli Chandra
Sandhu Gurtej S.
Le Dung A.
Micro)n Technology, Inc.
Wells St. John P.S.
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