Methods of forming integrated circuitry

Details Methods of forming integrated circuitry Methods of forming integrated circuitry

2007-05-15

2007-05-15

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S404000, C438S424000

Reexamination Certificate

active

11059770

ABSTRACT:
The invention includes methods of forming integrated circuitry. In one implementation, a method of forming an integrated circuit includes forming a plurality of isolation trenches within semiconductive silicon-comprising material. The isolation trenches comprise sidewalls comprising exposed semiconductive silicon-comprising material. An epitaxial silicon-comprising layer is grown from the exposed semiconductive silicon-comprising material sidewalls within the isolation trenches. Electrically insulative trench isolation material is formed within the isolation trenches over the epitaxially-grown silicon-comprising layer. Other aspects and implementations are contemplated.

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