Methods of forming integrated circuit devices including...

Details Methods of forming integrated circuit devices including... Methods of forming integrated circuit devices including...

2006-04-25

2006-04-25

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S597000, C438S624000

Reexamination Certificate

active

07033908

ABSTRACT:
Methods of forming an electronic device including a substrate and a raised pattern on the substrate are provided. For example, a first insulating layer may be formed on the raised pattern and on the substrate. More particularly, forming the first insulating layer may include forming a first portion of the first insulating layer using a first processing condition and forming a second portion of the first insulating layer using a second processing condition. After forming the first insulating layer including the first and second portions, portions of the first insulating layer may be removed to expose portions of the raised pattern while maintaining portions of the first insulating layer on the substrate. After removing portions of the first insulating layer, a second insulating layer may be formed on the exposed portions of the raised pattern and on the maintained portions of the first insulating layer.

REFERENCES:
patent: 5747382 (1998-05-01), Huang et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6150238 (2000-11-01), Wu et al.
patent: 6204161 (2001-03-01), Chung et al.
patent: 6348375 (2002-02-01), Lee et al.
patent: 6423630 (2002-07-01), Catabay et al.
patent: 6798038 (2004-09-01), Sato et al.

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