Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2011-03-29
2011-03-29
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C257SE21396, C257SE21651, C438S386000
Reexamination Certificate
active
07915136
ABSTRACT:
The invention includes methods of forming semiconductor constructions and methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive material within openings in an insulative material to form capacitor electrode structures. A lattice is formed in physical contact with at least some of the electrode structures, a protective cap is formed over the lattice, and subsequently some of the insulative material is removed to expose outer surfaces of the electrode structures. The lattice can alleviate toppling or other loss of structural integrity of the electrode structures, and the protective cap can protect covered portions of the insulative material from the etch. After the outer sidewalls of the electrode structures are exposed, the protective cap is removed. The electrode structures are then incorporated into capacitor constructions.
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Gibso
Lerner, David Littenburg, Krumholz & Mentlik, LLP
Round Rock Research, LLC
Sarkar Asok K
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