Methods of forming hemispherical grain polysilicon

Details Methods of forming hemispherical grain polysilicon Methods of forming hemispherical grain polysilicon

1998-02-03

2000-07-04

Turner, Archene

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

216 79, 216 99, 134 3, 438735, 438758, 438778, 438795, H01L 21302

Patent

active

060838493

ABSTRACT:
In one aspect, the invention encompasses a semiconductor processing method comprising contacting a surface with a liquid solution comprising at least one fluorine-containing species and a temperature of at least about 40.degree. C. In another aspect, the invention encompasses a method of passivating a silicon-comprising layer comprising contacting the layer with a liquid solution comprising hydrogen fluoride and a temperature of at least about 40.degree. C. In yet another aspect, the invention encompasses a method of forming hemispherical grain polysilicon comprising: a) forming a layer comprising substantially amorphous silicon over a substrate; b) contacting the layer comprising substantially amorphous silicon with a liquid solution comprising fluorine-containing species and a temperature of at least about 40.degree. C.; c) seeding the layer comprising substantially amorphous silicon; and d) annealing the seeded layer to convert at least a portion of the seeded layer to hemispherical grain polysilicon.

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patent: 5290361 (1994-03-01), Hayashida et al.
patent: 5294568 (1994-03-01), McNeilly et al.
patent: 5571375 (1996-11-01), Izumi et al.

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