Methods of forming field emission devices with self-aligned gate

Details Methods of forming field emission devices with self-aligned gate Methods of forming field emission devices with self-aligned gate

1996-11-04

1999-01-12

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, H01J 902

Patent

active

058578854

ABSTRACT:
Methods of forming a field emission device with self-aligned gate structure, comprising a substrate on which at least one wedge or tip electrode and one accelerating or gate electrode are provided. The only photolithographic step involved is to pattern an integrated gate electrode opening on high quality, thermally grown oxide which can withstand a strong electric field. The formation of the emissive electrode by etching starts at the edge of the integrated gate electrode opening defined by the oxide material layer. As a result, the distance between the emissive electrode and the gate electrode is minimum. Simple wet chemical etching may be used to form the emissive electrode.

REFERENCES:
patent: 5389026 (1995-02-01), Fukuta et al.
patent: 5458518 (1995-10-01), Lee

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