Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-07-25
2006-07-25
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S217000, C438S230000, C438S291000, C438S706000
Reexamination Certificate
active
07081416
ABSTRACT:
The invention includes methods of forming field effect transistor gates. In one implementation, a series of layers is formed proximate a semiconductive material channel region. The layers comprise a gate dielectric layer and a conductive metal-comprising layer having an ion implanted polysilicon layer received therebetween. Patterned masking material is formed over the series of layers. Using the patterned masking material as a mask, etching is conducted through the conductive metal-comprising layer and only partially into the ion implanted polysilicon layer. After such etching, the ion implanted polysilicon is annealed effective to electrically activate implanted impurity atoms received therein. Other aspects and implementations are contemplated.
REFERENCES:
patent: 4977100 (1990-12-01), Shimura
patent: 5936874 (1999-08-01), Clampitt et al.
patent: 5946596 (1999-08-01), Ying
patent: 5960285 (1999-09-01), Hong
patent: 6191019 (2001-02-01), Liao et al.
patent: 6281064 (2001-08-01), Mandelman et al.
patent: 6455367 (2002-09-01), Clampitt et al.
U.S. Appl. No. 09/971,250, filed Oct. 04, 2001, Agarwal.
Hwang David K.
Zahurak John K.
Vinh Lan
Wells St. John P.S.
LandOfFree
Methods of forming field effect transistor gates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of forming field effect transistor gates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming field effect transistor gates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3559131