Methods of forming ferroelectric crystals as storage media...

Details Methods of forming ferroelectric crystals as storage media... Methods of forming ferroelectric crystals as storage media...

2006-12-22

2009-10-06

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C369S126000, C365S145000

Reexamination Certificate

active

07598096

ABSTRACT:
Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a conductive layer on a single crystal ferroelectric material, patterning the conductive layer to form contacts, attaching a portion of a circuit on the patterned conductive layer, lapping the single crystal ferroelectric material to a thickness of about 1 to about 10 microns and then etching the single crystal to a thickness below about 25 nm.

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