Batteries: thermoelectric and photoelectric – Thermoelectric – Peltier effect device
Reexamination Certificate
2006-11-27
2011-11-22
Michener, Jennifer (Department: 1728)
Batteries: thermoelectric and photoelectric
Thermoelectric
Peltier effect device
C136S204000, C361S704000, C361S717000, C361S718000, C361S719000, C062S003200, C062S003300, C062S003700
Reexamination Certificate
active
08063298
ABSTRACT:
A method of forming a thermoelectric device may include providing a substrate having a surface, and thermally coupling a thermoelectric p-n couple to a first portion of the surface of a substrate. Moreover, the thermoelectric p-n couple may include a p-type thermoelectric element and an n-type thermoelectric element. In addition, a thermally conductive field layer may be formed on a second portion of the surface of the substrate adjacent the first portion of the surface of the substrate. Related structures are also discussed.
REFERENCES:
patent: 3136134 (1964-06-01), Smith
patent: 3296034 (1967-01-01), Reich
patent: 3607444 (1971-09-01), Debucs
patent: 3663307 (1972-05-01), Mole
patent: 4443650 (1984-04-01), Takagi et al.
patent: 5006178 (1991-04-01), Bijvoets
patent: 5254178 (1993-10-01), Yamada et al.
patent: 5430322 (1995-07-01), Koyanagi et al.
patent: 5837929 (1998-11-01), Adelman
patent: 5841064 (1998-11-01), Maekawa et al.
patent: 5865975 (1999-02-01), Bishop
patent: 5869242 (1999-02-01), Kamb
patent: 5874219 (1999-02-01), Rava et al.
patent: 5900071 (1999-05-01), Harman
patent: 5922988 (1999-07-01), Nishimoto
patent: 6060331 (2000-05-01), Shakouri et al.
patent: 6060657 (2000-05-01), Harman
patent: 6062681 (2000-05-01), Field et al.
patent: 6071351 (2000-06-01), Venkatasubramanian
patent: 6072925 (2000-06-01), Sakata
patent: 6084050 (2000-07-01), Ooba et al.
patent: 6094919 (2000-08-01), Bhatia
patent: 6154266 (2000-11-01), Okamoto et al.
patent: 6154479 (2000-11-01), Yoshikawa et al.
patent: 6180351 (2001-01-01), Cattell
patent: 6271459 (2001-08-01), Yoo
patent: 6282907 (2001-09-01), Ghoshal
patent: 6300150 (2001-10-01), Venkatasubramanian
patent: 6347521 (2002-02-01), Kadotani et al.
patent: 6365821 (2002-04-01), Prasher
patent: 6374616 (2002-04-01), Ohkubo et al.
patent: 6384312 (2002-05-01), Ghoshal et al.
patent: 6403876 (2002-06-01), Ghoshal et al.
patent: 6410971 (2002-06-01), Otey
patent: 6412286 (2002-07-01), Park et al.
patent: 6424533 (2002-07-01), Chu et al.
patent: 6505468 (2003-01-01), Venkatasubramanian
patent: 6605772 (2003-08-01), Harman et al.
patent: 6696635 (2004-02-01), Prasher
patent: 6826916 (2004-12-01), Shimada
patent: 6867978 (2005-03-01), Whittenburg et al.
patent: 7005320 (2006-02-01), Kwon
patent: 7005738 (2006-02-01), Zuo et al.
patent: 7009289 (2006-03-01), Hu et al.
patent: 7038316 (2006-05-01), Hu et al.
patent: 2001/0052234 (2001-12-01), Venkatasubramanian
patent: 2002/0033189 (2002-03-01), Macris
patent: 2002/0053359 (2002-05-01), Harman et al.
patent: 2002/0069906 (2002-06-01), Macris
patent: 2002/0139123 (2002-10-01), Bell
patent: 2005/0178423 (2005-08-01), Ramanathan et al.
patent: 0 687 020 (1995-12-01), None
patent: 0 915 515 (1999-05-01), None
patent: 6-97512 (1994-04-01), None
patent: 0 805 501 (1997-11-01), None
patent: WO98/43740 (1998-10-01), None
patent: WO98/44562 (1998-10-01), None
patent: WO 00/49664 (2000-08-01), None
patent: WO 01/08800 (2001-02-01), None
International Search Report and Written Opinion for PCT/US2006/045535; Jan. 3, 2008.
International Search Report and Written Opinion for PCT/US2006/045535; Sep. 10, 2007.
US 6,381,965, 5/2002, (withdrawn).
Fitch, J. Patrick, Bahrand Sokhansanj, IEEE, Genomic Engineering: Moving Beyond DNA Sequence to Function, Proceedings of the IEEE, vol. 88, No. 12, Dec. 2000, pp. 1949-1971.
Hofmeister, Rudolf et al., New Photorefractive Mechanism in Centrosymmetric Crystals: A Strain-Coordinated Jahn-Teller Relaxation, Physical Review Letters, vol. 69, No. 9, Aug. 31, 1992, pp. 1459-1462.
Samuel K. Moore, Making Chips, IEEE Spectrum, Biotechnology, Mar. 2001, pp. 54-60.
Photoexcited Carrier Lifetimes and Spatial Transport in Surface-free GaAS Homostructures, L.M. Smith et al., J. Vac. Sci. Technol. B, vol. 8, No. 4 Jul./Aug. 1990, pp. 787-792.
Ideal Electronic Properties of a p-Ge/p-Al0.85Ga0.16As Interface, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 3, Jul. 15, 1991, pp. 318-320.
Selective Plasma Etching of Ge Substrates for Thin Freestanding GaAs-AIGaAs Heterostructures, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 17, Oct. 21, 1991, pp. 2153-2155.
Visible Light Emission From Quantized Planar Ge Structures, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 13, Sep. 23, 1991, pp. 1603-1605.
High Quality GaAs on Si Using Si0.04Ge0.96/Ge Buffer Layers, Rama Venkatasbramanian, et al., Journal of Crystal Growth 107 (1991) pp. 489-493.
The New Face of A.I., Michael Powell, Merger Maniac Europe's CD Underworld, The Supercheap Future of Flying, Mar. 2002, Hacking the Racetrack, Insife Nuke University, Wired, A New Kind of Cool, Rama Venkatasubramanian.
Optimization of the Heteroepitaxy of Ge on GaAs for Minority-Carrier Lifetime, Rama Venkatasubramanian, et al., Journal of Crystal Growth 112 (1991) pp. 7-13.
Intrinsic Recombination and Interface Characterization in “surface-free” GaAs Structures, D.J. Wolford et al., J. Vac. Sci. Technol. B. vol. 9, No. 4, Jul./Aug. 1991, pp. 2369-2376.
High-Quality Eutectic-Metal-Bonded AlGaAs-GaAs Thin Films on SI Substrates, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 60, No. 7, Feb. 17, 1992, pp. 886-888.
Photoluminescence of Porous Silicon Buried Underneath Epitaxial GaP, J.C., Campbell, et al., Appl. Phys. Lett., vol. 60, No. 7, Feb. 17, 1992, pp. 889-891.
Thermal Characterization of Bi2, Te3/Sb2Te3Superlattices, M.N. Touzelbaev amd P. Zhou, Department of Mechanical Engineering, Stanford University, Stanford, California 94305-3030, Rama Venkatasubramanian, Center for Semiconductor Research, Research Triangle Institute, Research Triangle Park, Durham, NC 22709-2195, K.E. Goodson Electronic mail goodson@vk.stanford.edu, Journal of Applied Physics, vol. 90, No. 2, Jul. 15, 2001, pp. 763-767.
Smaller, Faster, Efficient Thermoelectric Cooling, Rama Venkatasubramanian. vol. 30, No. 41, Oct. 17, 2001 ISSN: 0300-757X, pp. 1-2.
CVD Diamond for Components and Emitters, J. Davidson, Corresponding Author, e-mail address: jld@vuse.vanderbilt.edu (J. Davidson) et al., Vanderbilt University 2201 West End Avenue, Nashville, TN 37235, USA, Diamond and Related Materials 10 (2001) pp. 1736-1742.
Sneak Preview, Optical Device Transfers Data Fast, Rama Venkatasubramanian, design news Dec. 17, 2001. p. 14.
Lattice Thermal Conductivity Reduction and Phonon Localizationlike Behavior in Superlattice Structures, Rama Venkatasubramanian, Research Triangle Institute, Research Triangle Park, North Carolina 27709, Physical Review B., vol. 61, No. 4, Jan. 15, 2000—II, pp. 3091-3097.
Phonon-Blocking Electron-Transmitting Structured, Rama Venkatasubramanian et al., Research Triangle Institute, Research Triangle Park, NC, USA, 18 International Conference on Thermoelectric (1999), pp. 100-103.
Magnetoresistance Technique for Determining Cross-Plane Mobility in Superlattice Devices, S.W. Johnson et al., National Renewable Energy Laboratory, Golden, CO, USA, Research Triangle Institute, Research Triangle Park, NC, USA, 18thInternational Conference on Thermoelectrics (1999), pp. 675-686.
RTI International, “New Thermoelectric Materials Can Keep Chips Cool Advances in Fiber Optics and in Biotechnology also are Likely” Oct. 9, 2001.
RTI International Annual Report 2001, Turning Knowledge into Practice, pp. 4-37.
Cooling Film Tempers Tiny Hot Spots, Rama Venkatasubramanian et al, Science News, No. 3, 2001, v160, i18, p. 280.
Improved Photoluminescence of GaAs in ZnSe/GaAs Heterojuncations grown by Organometallic Epitaxy, S.K. Ghandhi et al., Electrical Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, Appl. Phys. Lett. vol. 53 No. 14, Oct. 3, 1988, pp. 1308-1310.
Epitaxy of Germanium using Germane in the Presence of Tetramethylgermanium, Rama Venkatasubramanian et al., Research Triangle Institute, P.O. Box 12194, Research Triangle Park, NC, 27709, J. Appl. Phys. vol. 66, No. 11, Dec. 1, 1989, pp. 5662-5664.
Radiative Recombination in Surface free n+In−In+GaAs Homostructures, L.M. Smith and D.J. Wolford et al., Appl. Phys. Lett., v
Alley Randall G.
Koester David A.
Martin Matthew
Michener Jennifer
Myers Bigel Sibley & Sajovec P.A.
Nextreme Thermal Solutions, Inc.
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