Methods of forming electrically conductive plugs

Details Methods of forming electrically conductive plugs Methods of forming electrically conductive plugs

2008-05-06

2008-05-06

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S672000

Reexamination Certificate

active

11728499

ABSTRACT:
A method of forming an electrically conductive plug includes providing an opening within electrically insulative material over a node location on a substrate. An electrically conductive material is formed within the opening and elevationally over the insulative material. Some of the conductive material is removed effective to recess an outermost surface of the conductive material to from about 100 Angstroms to about 200 Angstroms from an outermost surface of the insulative material after said removing of some of the conductive material. After removing some of the conductive material, remaining volume of the opening over the conductive material is overfilled with an electrically conductive metal material different from that of the conductive material. The metal material is polished effective to form an electrically conductive plug within the opening comprising the conductive material and the metal material. Other aspects and implementations are contemplated.

REFERENCES:
patent: 7189626 (2007-03-01), Elkins et al.
patent: 2002/0127743 (2002-09-01), Nickel et al.
patent: 2002/0176220 (2002-11-01), Tang et al.
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patent: 2003/0100178 (2003-05-01), Kamoshima et al.
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patent: 2004/0224497 (2004-11-01), Barth
patent: 2006/0024950 (2006-02-01), Choi et al.
patent: 2006/0094236 (2006-05-01), Elkins et al.

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