Methods of forming denuded zone in wafer by intrinsic gettering

Details Methods of forming denuded zone in wafer by intrinsic gettering Methods of forming denuded zone in wafer by intrinsic gettering

1984-04-12

1986-07-01

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 357 34, 357 91, H01L 21263, H01L 21322

Patent

active

045978042

ABSTRACT:
A variety of methods are applicable to production of semiconductor devices in which the active layer is produced in a denuded zone which is thin and free of defects. This denuded zone in combination with a high concentration of crystalline defects contained in a deep layer of the semiconductor device, allows the semiconductor device to enjoy the function of the intrinsic gettering effect. A variety of improvements, including a decrease in the overall production time, removal of limitations due to the oxygen concentration of a wafer, etc. is realized by introducing an idea that the annealing temperature is increased and/or decreased gradually at a predetermined rate. A variety of such improved annealing processes being combined with each other and/or to a variety of conventional annealing processes, aiming at a higher magnitude of the intrinsic gettering effect. This improvement is further modified to be combined with epitaxy to diversify the uses of a denuded zone.

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